IRGP30B120KD-EP by Infineon Technologies – Specifications

Infineon Technologies IRGP30B120KD-EP is a IRGP30B120KD-EP from Infineon Technologies, part of the IGBTs. It is designed for 300W 60A 1.2kV NPT(非穿通型) TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 300W
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@15V,60A
  • Total Gate Charge (Qg@Ic,Vge): 169nC
  • Diode Reverse Recovery Time (Trr): 300ns
  • Turn?off Switching Loss (Eoff): 1.49mJ
  • Turn?on Switching Loss (Eon): 1.07mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRGP30B120KD-EP

Model NumberIRGP30B120KD-EP
Model NameInfineon Technologies IRGP30B120KD-EP
CategoryIGBTs
BrandInfineon Technologies
Description300W 60A 1.2kV NPT(非穿通型) TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)300W
Operating Temperature-
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@15V,60A
Total Gate Charge (Qg@Ic,Vge)169nC
Diode Reverse Recovery Time (Trr)300ns
Turn?off Switching Loss (Eoff)1.49mJ
Turn?on Switching Loss (Eon)1.07mJ

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