IRGP35B60PD-EP by Infineon Technologies – Specifications

Infineon Technologies IRGP35B60PD-EP is a IRGP35B60PD-EP from Infineon Technologies, part of the IGBTs. It is designed for 308W 60A 600V NPT(非穿通型) TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 308W
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Diode Reverse Recovery Time (Trr): 42ns
  • Turn?off Switching Loss (Eoff): 0.215mJ
  • Turn?on Switching Loss (Eon): 0.22mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGP35B60PD-EP

Full Specifications of IRGP35B60PD-EP

Model NumberIRGP35B60PD-EP
Model NameInfineon Technologies IRGP35B60PD-EP
CategoryIGBTs
BrandInfineon Technologies
Description308W 60A 600V NPT(非穿通型) TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)308W
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Diode Reverse Recovery Time (Trr)42ns
Turn?off Switching Loss (Eoff)0.215mJ
Turn?on Switching Loss (Eon)0.22mJ

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