IRGP4263DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGP4263DPBF is a IRGP4263DPBF from Infineon Technologies, part of the IGBTs. It is designed for 325W 90A 650V TO-247AC IGBTs ROHS. This product comes in a TO-247AC package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 140ns
  • Power Dissipation (Pd): 325W
  • Turn?on Delay Time (Td(on)): 70ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 90A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,48A
  • Total Gate Charge (Qg@Ic,Vge): 145nC
  • Diode Reverse Recovery Time (Trr): 170ns
  • Turn?off Switching Loss (Eoff): 1.4mJ
  • Turn?on Switching Loss (Eon): 2.9mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGP4263DPBF

Full Specifications of IRGP4263DPBF

Model NumberIRGP4263DPBF
Model NameInfineon Technologies IRGP4263DPBF
CategoryIGBTs
BrandInfineon Technologies
Description325W 90A 650V TO-247AC IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AC
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))140ns
Power Dissipation (Pd)325W
Turn?on Delay Time (Td(on))70ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)90A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,48A
Total Gate Charge (Qg@Ic,Vge)145nC
Diode Reverse Recovery Time (Trr)170ns
Turn?off Switching Loss (Eoff)1.4mJ
Turn?on Switching Loss (Eon)2.9mJ

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