IRGP4750D-EPBF by Infineon Technologies – Specifications

Infineon Technologies IRGP4750D-EPBF is a IRGP4750D-EPBF from Infineon Technologies, part of the IGBTs. It is designed for 273W 70A 650V TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 105ns
  • Power Dissipation (Pd): 273W
  • Turn?on Delay Time (Td(on)): 50ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 70A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,35A
  • Total Gate Charge (Qg@Ic,Vge): 105nC
  • Diode Reverse Recovery Time (Trr): 150ns
  • Turn?off Switching Loss (Eoff): 0.5mJ
  • Turn?on Switching Loss (Eon): 1.3mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGP4750D-EPBF

Full Specifications of IRGP4750D-EPBF

Model NumberIRGP4750D-EPBF
Model NameInfineon Technologies IRGP4750D-EPBF
CategoryIGBTs
BrandInfineon Technologies
Description273W 70A 650V TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))105ns
Power Dissipation (Pd)273W
Turn?on Delay Time (Td(on))50ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)70A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,35A
Total Gate Charge (Qg@Ic,Vge)105nC
Diode Reverse Recovery Time (Trr)150ns
Turn?off Switching Loss (Eoff)0.5mJ
Turn?on Switching Loss (Eon)1.3mJ

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