Infineon Technologies IRGP4760PBF is a IRGP4760PBF from Infineon Technologies, part of the IGBTs. It is designed for 325W 90A 650V TO-247AC IGBTs ROHS. This product comes in a TO-247AC package and is sold as Tube-packed. Key features include:
- Turn?off Delay Time (Td(off)): 140ns
- Power Dissipation (Pd): 325W
- Turn?on Delay Time (Td(on)): 70ns
- Operating Temperature: -40℃~+175℃@(Tj)
- Collector Current (Ic): 90A
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,48A
- Total Gate Charge (Qg@Ic,Vge): 145nC
- Turn?off Switching Loss (Eoff): 1mJ
- Turn?on Switching Loss (Eon): 1.7mJ
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRGP4760PBF
Full Specifications of IRGP4760PBF
Model Number | IRGP4760PBF |
Model Name | Infineon Technologies IRGP4760PBF |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 325W 90A 650V TO-247AC IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-247AC |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Turn?off Delay Time (Td(off)) | 140ns |
Power Dissipation (Pd) | 325W |
Turn?on Delay Time (Td(on)) | 70ns |
Operating Temperature | -40℃~+175℃@(Tj) |
Collector Current (Ic) | 90A |
Collector-Emitter Breakdown Voltage (Vces) | 650V |
Input Capacitance (Cies@Vce) | - |
Type | - |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,48A |
Total Gate Charge (Qg@Ic,Vge) | 145nC |
Turn?off Switching Loss (Eoff) | 1mJ |
Turn?on Switching Loss (Eon) | 1.7mJ |
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