IRGP50B60PD1-EP by Infineon Technologies – Specifications

Infineon Technologies IRGP50B60PD1-EP is a IRGP50B60PD1-EP from Infineon Technologies, part of the IGBTs. It is designed for 390W 75A 600V NPT(非穿通型) TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 130ns
  • Power Dissipation (Pd): 390W
  • Turn?on Delay Time (Td(on)): 30ns
  • Collector Current (Ic): 75A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.85V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 205nC
  • Diode Reverse Recovery Time (Trr): 42ns
  • Turn?off Switching Loss (Eoff): 0.375mJ
  • Turn?on Switching Loss (Eon): 0.255mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGP50B60PD1-EP

Full Specifications of IRGP50B60PD1-EP

Model NumberIRGP50B60PD1-EP
Model NameInfineon Technologies IRGP50B60PD1-EP
CategoryIGBTs
BrandInfineon Technologies
Description390W 75A 600V NPT(非穿通型) TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))130ns
Power Dissipation (Pd)390W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-
Collector Current (Ic)75A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.85V@15V,50A
Total Gate Charge (Qg@Ic,Vge)205nC
Diode Reverse Recovery Time (Trr)42ns
Turn?off Switching Loss (Eoff)0.375mJ
Turn?on Switching Loss (Eon)0.255mJ

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