Infineon Technologies IRGP50B60PDPBF is a IRGP50B60PDPBF from Infineon Technologies, part of the IGBTs. It is designed for 370W 75A 600V NPT(非穿通型) TO-247AC IGBTs ROHS. This product comes in a TO-247AC package and is sold as Bag-packed. Key features include:
- Power Dissipation (Pd): 370W
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 75A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Type: NPT(非穿通型)
- Diode Reverse Recovery Time (Trr): 50ns
- Turn?off Switching Loss (Eoff): 0.38mJ
- Turn?on Switching Loss (Eon): 0.36mJ
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRGP50B60PDPBF
Full Specifications of IRGP50B60PDPBF
Model Number | IRGP50B60PDPBF |
Model Name | Infineon Technologies IRGP50B60PDPBF |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 370W 75A 600V NPT(非穿通型) TO-247AC IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-247AC |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Power Dissipation (Pd) | 370W |
Operating Temperature | -55℃~+150℃@(Tj) |
Collector Current (Ic) | 75A |
Collector-Emitter Breakdown Voltage (Vces) | 600V |
Input Capacitance (Cies@Vce) | - |
Type | NPT(非穿通型) |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
Diode Reverse Recovery Time (Trr) | 50ns |
Turn?off Switching Loss (Eoff) | 0.38mJ |
Turn?on Switching Loss (Eon) | 0.36mJ |
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