IRGP6650D-EPBF by Infineon Technologies – Specifications

Infineon Technologies IRGP6650D-EPBF is a IRGP6650D-EPBF from Infineon Technologies, part of the IGBTs. It is designed for 306W 80A 600V TO-247AD IGBTs ROHS. This product comes in a TO-247AD package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 105ns
  • Power Dissipation (Pd): 306W
  • Turn?on Delay Time (Td(on)): 40ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,35A
  • Total Gate Charge (Qg@Ic,Vge): 75nC
  • Diode Reverse Recovery Time (Trr): 50ns
  • Turn?off Switching Loss (Eoff): 0.63mJ
  • Turn?on Switching Loss (Eon): 0.3mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGP6650D-EPBF

Full Specifications of IRGP6650D-EPBF

Model NumberIRGP6650D-EPBF
Model NameInfineon Technologies IRGP6650D-EPBF
CategoryIGBTs
BrandInfineon Technologies
Description306W 80A 600V TO-247AD IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247AD
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))105ns
Power Dissipation (Pd)306W
Turn?on Delay Time (Td(on))40ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.95V@15V,35A
Total Gate Charge (Qg@Ic,Vge)75nC
Diode Reverse Recovery Time (Trr)50ns
Turn?off Switching Loss (Eoff)0.63mJ
Turn?on Switching Loss (Eon)0.3mJ

Compare Infineon Technologies - IRGP6650D-EPBF With Other 200 Models

Related Models - IRGP6650D-EPBF Alternative

Scroll to Top