IRGPS40B120UPBF by Infineon Technologies – Specifications

Infineon Technologies IRGPS40B120UPBF is a IRGPS40B120UPBF from Infineon Technologies, part of the IGBTs. It is designed for 595W 80A 1.2kV NPT(非穿通型) TO-274AA IGBTs ROHS. This product comes in a TO-274AA package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 595W
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.71V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 340nC
  • Turn?off Switching Loss (Eoff): 1.65mJ
  • Turn?on Switching Loss (Eon): 1.4mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRGPS40B120UPBF

Model NumberIRGPS40B120UPBF
Model NameInfineon Technologies IRGPS40B120UPBF
CategoryIGBTs
BrandInfineon Technologies
Description595W 80A 1.2kV NPT(非穿通型) TO-274AA IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-274AA
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)595W
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.71V@15V,50A
Total Gate Charge (Qg@Ic,Vge)340nC
Turn?off Switching Loss (Eoff)1.65mJ
Turn?on Switching Loss (Eon)1.4mJ

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