Infineon Technologies IRGR3B60KD2TRP is a IRGR3B60KD2TRP from Infineon Technologies, part of the IGBTs. It is designed for 52W 7.8A 600V NPT(非穿通型) DPAK IGBTs ROHS. This product comes in a DPAK package and is sold as Tape & Reel (TR). Key features include:
- Power Dissipation (Pd): 52W
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 7.8A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Type: NPT(非穿通型)
- Diode Reverse Recovery Time (Trr): 77ns
- Turn?off Switching Loss (Eoff): 0.039mJ
- Turn?on Switching Loss (Eon): 0.062mJ
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.45 grams.
More on IRGR3B60KD2TRP
Full Specifications of IRGR3B60KD2TRP
Model Number | IRGR3B60KD2TRP |
Model Name | Infineon Technologies IRGR3B60KD2TRP |
Category | IGBTs |
Brand | Infineon Technologies |
Description | 52W 7.8A 600V NPT(非穿通型) DPAK IGBTs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.450 grams / 0.015873 oz |
Package / Case | DPAK |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Power Dissipation (Pd) | 52W |
Operating Temperature | -55℃~+150℃@(Tj) |
Collector Current (Ic) | 7.8A |
Collector-Emitter Breakdown Voltage (Vces) | 600V |
Input Capacitance (Cies@Vce) | - |
Type | NPT(非穿通型) |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
Diode Reverse Recovery Time (Trr) | 77ns |
Turn?off Switching Loss (Eoff) | 0.039mJ |
Turn?on Switching Loss (Eon) | 0.062mJ |
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