IRGR4045DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGR4045DPBF is a IRGR4045DPBF from Infineon Technologies, part of the IGBTs. It is designed for 77W 12A 600V DPAK IGBTs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 75ns
  • Power Dissipation (Pd): 77W
  • Turn?on Delay Time (Td(on)): 27ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 12A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,6A
  • Total Gate Charge (Qg@Ic,Vge): 19.5nC
  • Diode Reverse Recovery Time (Trr): 74ns
  • Turn?off Switching Loss (Eoff): 0.122mJ
  • Turn?on Switching Loss (Eon): 0.056mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGR4045DPBF

Full Specifications of IRGR4045DPBF

Model NumberIRGR4045DPBF
Model NameInfineon Technologies IRGR4045DPBF
CategoryIGBTs
BrandInfineon Technologies
Description77W 12A 600V DPAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))75ns
Power Dissipation (Pd)77W
Turn?on Delay Time (Td(on))27ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)12A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,6A
Total Gate Charge (Qg@Ic,Vge)19.5nC
Diode Reverse Recovery Time (Trr)74ns
Turn?off Switching Loss (Eoff)0.122mJ
Turn?on Switching Loss (Eon)0.056mJ

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