IRGS15B60KDTRRP by Infineon Technologies – Specifications

Infineon Technologies IRGS15B60KDTRRP is a IRGS15B60KDTRRP from Infineon Technologies, part of the IGBTs. It is designed for 208W 31A 600V NPT(非穿通型) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 184ns
  • Power Dissipation (Pd): 208W
  • Turn?on Delay Time (Td(on)): 34ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 31A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,15A
  • Total Gate Charge (Qg@Ic,Vge): 56nC
  • Diode Reverse Recovery Time (Trr): 92ns
  • Turn?off Switching Loss (Eoff): 0.34mJ
  • Turn?on Switching Loss (Eon): 0.22mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRGS15B60KDTRRP

Model NumberIRGS15B60KDTRRP
Model NameInfineon Technologies IRGS15B60KDTRRP
CategoryIGBTs
BrandInfineon Technologies
Description208W 31A 600V NPT(非穿通型) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))184ns
Power Dissipation (Pd)208W
Turn?on Delay Time (Td(on))34ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)31A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,15A
Total Gate Charge (Qg@Ic,Vge)56nC
Diode Reverse Recovery Time (Trr)92ns
Turn?off Switching Loss (Eoff)0.34mJ
Turn?on Switching Loss (Eon)0.22mJ

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