IRGS4064DTRLPBF by Infineon Technologies – Specifications

Infineon Technologies IRGS4064DTRLPBF is a IRGS4064DTRLPBF from Infineon Technologies, part of the IGBTs. It is designed for 101W 20A 600V D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 79ns
  • Power Dissipation (Pd): 101W
  • Turn?on Delay Time (Td(on)): 27ns
  • Collector Current (Ic): 20A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.91V@15V,10A
  • Total Gate Charge (Qg@Ic,Vge): 32nC
  • Diode Reverse Recovery Time (Trr): 62ns
  • Turn?off Switching Loss (Eoff): 0.2mJ
  • Turn?on Switching Loss (Eon): 0.029mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRGS4064DTRLPBF

Model NumberIRGS4064DTRLPBF
Model NameInfineon Technologies IRGS4064DTRLPBF
CategoryIGBTs
BrandInfineon Technologies
Description101W 20A 600V D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))79ns
Power Dissipation (Pd)101W
Turn?on Delay Time (Td(on))27ns
Operating Temperature-
Collector Current (Ic)20A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.91V@15V,10A
Total Gate Charge (Qg@Ic,Vge)32nC
Diode Reverse Recovery Time (Trr)62ns
Turn?off Switching Loss (Eoff)0.2mJ
Turn?on Switching Loss (Eon)0.029mJ

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