IRGS4607DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGS4607DPBF is a IRGS4607DPBF from Infineon Technologies, part of the IGBTs. It is designed for 58W 11A 600V D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 120ns
  • Power Dissipation (Pd): 58W
  • Turn?on Delay Time (Td(on)): 27ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 11A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.05V@15V,4A
  • Total Gate Charge (Qg@Ic,Vge): 9nC
  • Diode Reverse Recovery Time (Trr): 48ns
  • Turn?off Switching Loss (Eoff): 0.062mJ
  • Turn?on Switching Loss (Eon): 0.14mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGS4607DPBF

Full Specifications of IRGS4607DPBF

Model NumberIRGS4607DPBF
Model NameInfineon Technologies IRGS4607DPBF
CategoryIGBTs
BrandInfineon Technologies
Description58W 11A 600V D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))120ns
Power Dissipation (Pd)58W
Turn?on Delay Time (Td(on))27ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)11A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.05V@15V,4A
Total Gate Charge (Qg@Ic,Vge)9nC
Diode Reverse Recovery Time (Trr)48ns
Turn?off Switching Loss (Eoff)0.062mJ
Turn?on Switching Loss (Eon)0.14mJ

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