IRGS4610DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGS4610DPBF is a IRGS4610DPBF from Infineon Technologies, part of the IGBTs. It is designed for 77W 16A 600V TO-263-3 IGBTs ROHS. This product comes in a TO-263-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 75ns
  • Power Dissipation (Pd): 77W
  • Turn?on Delay Time (Td(on)): 27ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 16A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,6A
  • Total Gate Charge (Qg@Ic,Vge): 13nC
  • Diode Reverse Recovery Time (Trr): 74ns
  • Turn?off Switching Loss (Eoff): 0.122mJ
  • Turn?on Switching Loss (Eon): 0.056mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRGS4610DPBF

Model NumberIRGS4610DPBF
Model NameInfineon Technologies IRGS4610DPBF
CategoryIGBTs
BrandInfineon Technologies
Description77W 16A 600V TO-263-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))75ns
Power Dissipation (Pd)77W
Turn?on Delay Time (Td(on))27ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)16A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,6A
Total Gate Charge (Qg@Ic,Vge)13nC
Diode Reverse Recovery Time (Trr)74ns
Turn?off Switching Loss (Eoff)0.122mJ
Turn?on Switching Loss (Eon)0.056mJ

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