IRGS4615DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGS4615DPBF is a IRGS4615DPBF from Infineon Technologies, part of the IGBTs. It is designed for 99W 23A 600V TO-263-3 IGBTs ROHS. This product comes in a TO-263-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 95ns
  • Power Dissipation (Pd): 99W
  • Turn?on Delay Time (Td(on)): 30ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 23A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.85V@15V,8A
  • Total Gate Charge (Qg@Ic,Vge): 19nC
  • Diode Reverse Recovery Time (Trr): 60ns
  • Turn?off Switching Loss (Eoff): 0.145mJ
  • Turn?on Switching Loss (Eon): 0.07mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGS4615DPBF

Full Specifications of IRGS4615DPBF

Model NumberIRGS4615DPBF
Model NameInfineon Technologies IRGS4615DPBF
CategoryIGBTs
BrandInfineon Technologies
Description99W 23A 600V TO-263-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))95ns
Power Dissipation (Pd)99W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)23A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.85V@15V,8A
Total Gate Charge (Qg@Ic,Vge)19nC
Diode Reverse Recovery Time (Trr)60ns
Turn?off Switching Loss (Eoff)0.145mJ
Turn?on Switching Loss (Eon)0.07mJ

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