IRGS4640DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGS4640DPBF is a IRGS4640DPBF from Infineon Technologies, part of the IGBTs. It is designed for 250W 65A 600V D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 104ns
  • Power Dissipation (Pd): 250W
  • Turn?on Delay Time (Td(on)): 41ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 65A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.9V@15V,24A
  • Total Gate Charge (Qg@Ic,Vge): 75nC
  • Diode Reverse Recovery Time (Trr): 89ns
  • Turn?off Switching Loss (Eoff): 0.6mJ
  • Turn?on Switching Loss (Eon): 0.115mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGS4640DPBF

Full Specifications of IRGS4640DPBF

Model NumberIRGS4640DPBF
Model NameInfineon Technologies IRGS4640DPBF
CategoryIGBTs
BrandInfineon Technologies
Description250W 65A 600V D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))104ns
Power Dissipation (Pd)250W
Turn?on Delay Time (Td(on))41ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)65A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.9V@15V,24A
Total Gate Charge (Qg@Ic,Vge)75nC
Diode Reverse Recovery Time (Trr)89ns
Turn?off Switching Loss (Eoff)0.6mJ
Turn?on Switching Loss (Eon)0.115mJ

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