IRGS4715DPBF by Infineon Technologies – Specifications

Infineon Technologies IRGS4715DPBF is a IRGS4715DPBF from Infineon Technologies, part of the IGBTs. It is designed for 100W 21A 650V D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 100ns
  • Power Dissipation (Pd): 100W
  • Turn?on Delay Time (Td(on)): 30ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 21A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,8A
  • Total Gate Charge (Qg@Ic,Vge): 30nC
  • Diode Reverse Recovery Time (Trr): 86ns
  • Turn?off Switching Loss (Eoff): 0.09mJ
  • Turn?on Switching Loss (Eon): 0.2mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGS4715DPBF

Full Specifications of IRGS4715DPBF

Model NumberIRGS4715DPBF
Model NameInfineon Technologies IRGS4715DPBF
CategoryIGBTs
BrandInfineon Technologies
Description100W 21A 650V D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))100ns
Power Dissipation (Pd)100W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)21A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,8A
Total Gate Charge (Qg@Ic,Vge)30nC
Diode Reverse Recovery Time (Trr)86ns
Turn?off Switching Loss (Eoff)0.09mJ
Turn?on Switching Loss (Eon)0.2mJ

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