IRGS6B60KDTRLP by Infineon Technologies – Specifications

Infineon Technologies IRGS6B60KDTRLP is a IRGS6B60KDTRLP from Infineon Technologies, part of the IGBTs. It is designed for 90W 13A 600V NPT(非穿通型) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 215ns
  • Power Dissipation (Pd): 90W
  • Turn?on Delay Time (Td(on)): 25ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 13A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,5A
  • Total Gate Charge (Qg@Ic,Vge): 18.2nC
  • Diode Reverse Recovery Time (Trr): 70ns
  • Turn?off Switching Loss (Eoff): 0.135mJ
  • Turn?on Switching Loss (Eon): 0.11mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGS6B60KDTRLP

Full Specifications of IRGS6B60KDTRLP

Model NumberIRGS6B60KDTRLP
Model NameInfineon Technologies IRGS6B60KDTRLP
CategoryIGBTs
BrandInfineon Technologies
Description90W 13A 600V NPT(非穿通型) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))215ns
Power Dissipation (Pd)90W
Turn?on Delay Time (Td(on))25ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)13A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,5A
Total Gate Charge (Qg@Ic,Vge)18.2nC
Diode Reverse Recovery Time (Trr)70ns
Turn?off Switching Loss (Eoff)0.135mJ
Turn?on Switching Loss (Eon)0.11mJ

Compare Infineon Technologies - IRGS6B60KDTRLP With Other 200 Models

Related Models - IRGS6B60KDTRLP Alternative

Scroll to Top