IRGS8B60KPBF by Infineon Technologies – Specifications

Infineon Technologies IRGS8B60KPBF is a IRGS8B60KPBF from Infineon Technologies, part of the IGBTs. It is designed for 167W 28A 600V NPT(非穿通型) D2PAK IGBTs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 140ns
  • Power Dissipation (Pd): 167W
  • Turn?on Delay Time (Td(on)): 23ns
  • Collector Current (Ic): 28A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,8A
  • Total Gate Charge (Qg@Ic,Vge): 29nC
  • Turn?off Switching Loss (Eoff): 0.16mJ
  • Turn?on Switching Loss (Eon): 0.16mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGS8B60KPBF

Full Specifications of IRGS8B60KPBF

Model NumberIRGS8B60KPBF
Model NameInfineon Technologies IRGS8B60KPBF
CategoryIGBTs
BrandInfineon Technologies
Description167W 28A 600V NPT(非穿通型) D2PAK IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))140ns
Power Dissipation (Pd)167W
Turn?on Delay Time (Td(on))23ns
Operating Temperature-
Collector Current (Ic)28A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,8A
Total Gate Charge (Qg@Ic,Vge)29nC
Turn?off Switching Loss (Eoff)0.16mJ
Turn?on Switching Loss (Eon)0.16mJ

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