IRGSL10B60KDPBF by Infineon Technologies – Specifications

Infineon Technologies IRGSL10B60KDPBF is a IRGSL10B60KDPBF from Infineon Technologies, part of the IGBTs. It is designed for 156W 22A 600V NPT(非穿通型) TO-262 IGBTs ROHS. This product comes in a TO-262 package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 230ns
  • Power Dissipation (Pd): 156W
  • Turn?on Delay Time (Td(on)): 30ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 22A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,10A
  • Total Gate Charge (Qg@Ic,Vge): 38nC
  • Diode Reverse Recovery Time (Trr): 90ns
  • Turn?off Switching Loss (Eoff): 0.25mJ
  • Turn?on Switching Loss (Eon): 0.14mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGSL10B60KDPBF

Full Specifications of IRGSL10B60KDPBF

Model NumberIRGSL10B60KDPBF
Model NameInfineon Technologies IRGSL10B60KDPBF
CategoryIGBTs
BrandInfineon Technologies
Description156W 22A 600V NPT(非穿通型) TO-262 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))230ns
Power Dissipation (Pd)156W
Turn?on Delay Time (Td(on))30ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)22A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,10A
Total Gate Charge (Qg@Ic,Vge)38nC
Diode Reverse Recovery Time (Trr)90ns
Turn?off Switching Loss (Eoff)0.25mJ
Turn?on Switching Loss (Eon)0.14mJ

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