IRGSL30B60KPBF by Infineon Technologies – Specifications

Infineon Technologies IRGSL30B60KPBF is a IRGSL30B60KPBF from Infineon Technologies, part of the IGBTs. It is designed for 370W 78A 600V NPT(非穿通型) TO-262 IGBTs ROHS. This product comes in a TO-262 package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 185ns
  • Power Dissipation (Pd): 370W
  • Turn?on Delay Time (Td(on)): 46ns
  • Operating Temperature: -55℃~+175℃@(Tj)
  • Collector Current (Ic): 78A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.35V@15V,30A
  • Total Gate Charge (Qg@Ic,Vge): 102nC
  • Turn?off Switching Loss (Eoff): 0.825mJ
  • Turn?on Switching Loss (Eon): 0.35mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRGSL30B60KPBF

Full Specifications of IRGSL30B60KPBF

Model NumberIRGSL30B60KPBF
Model NameInfineon Technologies IRGSL30B60KPBF
CategoryIGBTs
BrandInfineon Technologies
Description370W 78A 600V NPT(非穿通型) TO-262 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))185ns
Power Dissipation (Pd)370W
Turn?on Delay Time (Td(on))46ns
Operating Temperature-55℃~+175℃@(Tj)
Collector Current (Ic)78A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.35V@15V,30A
Total Gate Charge (Qg@Ic,Vge)102nC
Turn?off Switching Loss (Eoff)0.825mJ
Turn?on Switching Loss (Eon)0.35mJ

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