IRL2203NSPBF by Infineon Technologies – Specifications

Infineon Technologies IRL2203NSPBF is a IRL2203NSPBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 116A 7mΩ@60A,10V 3V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 116A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7mΩ@60A,10V
  • Power Dissipation (Pd): 3.8W;180W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.29nF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IRL2203NSPBF

Model NumberIRL2203NSPBF
Model NameInfineon Technologies IRL2203NSPBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 116A 7mΩ@60A,10V 3V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)116A
Drain Source On Resistance (RDS(on)@Vgs,Id)7mΩ@60A,10V
Power Dissipation (Pd)3.8W;180W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.29nF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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