IRLH5034TRPBF by Infineon Technologies – Specifications

Infineon Technologies IRLH5034TRPBF is a IRLH5034TRPBF from Infineon Technologies, part of the MOSFETs. It is designed for 40V 2mΩ@10V,50A 2.5V@150uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS. This product comes in a PQFN-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 29A;100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@10V,50A
  • Power Dissipation (Pd): 3.6W;156W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.5V@150uA
  • Reverse Transfer Capacitance (Crss@Vds): 260pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.73nF@25V
  • Total Gate Charge (Qg@Vgs): 82nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRLH5034TRPBF

Full Specifications of IRLH5034TRPBF

Model NumberIRLH5034TRPBF
Model NameInfineon Technologies IRLH5034TRPBF
CategoryMOSFETs
BrandInfineon Technologies
Description40V 2mΩ@10V,50A 2.5V@150uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CasePQFN-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)29A;100A
Drain Source On Resistance (RDS(on)@Vgs,Id)2mΩ@10V,50A
Power Dissipation (Pd)3.6W;156W
Gate Threshold Voltage (Vgs(th)@Id)2.5V@150uA
Reverse Transfer Capacitance (Crss@Vds)260pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.73nF@25V
Total Gate Charge (Qg@Vgs)82nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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