IRLR120NPBF by Infineon Technologies – Specifications

Infineon Technologies IRLR120NPBF is a IRLR120NPBF from Infineon Technologies, part of the MOSFETs. It is designed for 100V 10A 185mΩ@6A,10V 48W 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS. This product comes in a DPAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 10A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 185mΩ@6A,10V
  • Power Dissipation (Pd): 48W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 440pF@25V
  • Total Gate Charge (Qg@Vgs): 20nC@5V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRLR120NPBF

Model NumberIRLR120NPBF
Model NameInfineon Technologies IRLR120NPBF
CategoryMOSFETs
BrandInfineon Technologies
Description100V 10A 185mΩ@6A,10V 48W 2V@250uA 1PCSNChannel DPAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseDPAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)10A
Drain Source On Resistance (RDS(on)@Vgs,Id)185mΩ@6A,10V
Power Dissipation (Pd)48W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)440pF@25V
Total Gate Charge (Qg@Vgs)20nC@5V
Operating Temperature-55℃~+175℃@(Tj)

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