IRLS3813PBF by Infineon Technologies – Specifications

Infineon Technologies IRLS3813PBF is a IRLS3813PBF from Infineon Technologies, part of the MOSFETs. It is designed for 30V 160A 1.95mΩ@148A,10V 195W 2.35V@150uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 160A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.95mΩ@148A,10V
  • Power Dissipation (Pd): 195W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.35V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 8.02nF@25V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRLS3813PBF

Full Specifications of IRLS3813PBF

Model NumberIRLS3813PBF
Model NameInfineon Technologies IRLS3813PBF
CategoryMOSFETs
BrandInfineon Technologies
Description30V 160A 1.95mΩ@148A,10V 195W 2.35V@150uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)160A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.95mΩ@148A,10V
Power Dissipation (Pd)195W
Gate Threshold Voltage (Vgs(th)@Id)2.35V@150uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)8.02nF@25V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - IRLS3813PBF With Other 200 Models

Related Models - IRLS3813PBF Alternative

Scroll to Top