IRLZ34NSPBF by Infineon Technologies – Specifications

Infineon Technologies IRLZ34NSPBF is a IRLZ34NSPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 30A 35mΩ@16A,10V 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 30A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@16A,10V
  • Power Dissipation (Pd): 3.8W;68W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 880pF@25V
  • Total Gate Charge (Qg@Vgs): 25nC@5V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IRLZ34NSPBF

Model NumberIRLZ34NSPBF
Model NameInfineon Technologies IRLZ34NSPBF
CategoryMOSFETs
BrandInfineon Technologies
Description55V 30A 35mΩ@16A,10V 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseD2PAK
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)30A
Drain Source On Resistance (RDS(on)@Vgs,Id)35mΩ@16A,10V
Power Dissipation (Pd)3.8W;68W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)880pF@25V
Total Gate Charge (Qg@Vgs)25nC@5V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IRLZ34NSPBF With Other 200 Models

Related Models - IRLZ34NSPBF Alternative

Scroll to Top