Infineon Technologies IRLZ34NSPBF is a IRLZ34NSPBF from Infineon Technologies, part of the MOSFETs. It is designed for 55V 30A 35mΩ@16A,10V 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS. This product comes in a D2PAK package and is sold as Tube-packed. Key features include:
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 30A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 35mΩ@16A,10V
- Power Dissipation (Pd): 3.8W;68W
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 880pF@25V
- Total Gate Charge (Qg@Vgs): 25nC@5V
- Operating Temperature: -55℃~+175℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRLZ34NSPBF
Full Specifications of IRLZ34NSPBF
Model Number | IRLZ34NSPBF |
Model Name | Infineon Technologies IRLZ34NSPBF |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 55V 30A 35mΩ@16A,10V 2V@250uA 1PCSNChannel D2PAK MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | D2PAK |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 55V |
Continuous Drain Current (Id) | 30A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@16A,10V |
Power Dissipation (Pd) | 3.8W;68W |
Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 880pF@25V |
Total Gate Charge (Qg@Vgs) | 25nC@5V |
Operating Temperature | -55℃~+175℃@(Tj) |
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