Infineon Technologies IRS21171SPBF is a IRS21171SPBF from Infineon Technologies, part of the Gate Drive ICs. It is designed for High Side 1 290mA 75ns 35ns 10V~20V 600mA SOIC-8 Gate Drive ICs ROHS. This product comes in a SOIC-8 package and is sold as Bag-packed. Key features include:
- Driven Configuration: High Side
- Operating Temperature: -40℃~+125℃@(Ta)
- Number of Drivers: 1
- Load Type: IGBT;MOSFET
- Peak Output Current(source): 290mA
- Rise Time: 75ns
- Fall Time: 35ns
- Supply Voltage: 10V~20V
- Peak Output Current(sink): 600mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRS21171SPBF
Full Specifications of IRS21171SPBF
Model Number | IRS21171SPBF |
Model Name | Infineon Technologies IRS21171SPBF |
Category | Gate Drive ICs |
Brand | Infineon Technologies |
Description | High Side 1 290mA 75ns 35ns 10V~20V 600mA SOIC-8 Gate Drive ICs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SOIC-8 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Driven Configuration | High Side |
Operating Temperature | -40℃~+125℃@(Ta) |
Number of Drivers | 1 |
Load Type | IGBT;MOSFET |
Peak Output Current(source) | 290mA |
Rise Time | 75ns |
Fall Time | 35ns |
Supply Voltage | 10V~20V |
Peak Output Current(sink) | 600mA |
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