IRS2609DSPBF by Infineon Technologies – Specifications

Infineon Technologies IRS2609DSPBF is a IRS2609DSPBF from Infineon Technologies, part of the Gate Drive ICs. It is designed for Half Bridge 2 200mA 150ns 50ns 10V~20V 350mA SOIC-8 Gate Drive ICs ROHS. This product comes in a SOIC-8 package and is sold as Bag-packed. Key features include:

  • Driven Configuration: Half Bridge
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Number of Drivers: 2
  • Load Type: IGBT;MOSFET
  • Peak Output Current(source): 200mA
  • Rise Time: 150ns
  • Fall Time: 50ns
  • Supply Voltage: 10V~20V
  • Peak Output Current(sink): 350mA

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IRS2609DSPBF

Full Specifications of IRS2609DSPBF

Model NumberIRS2609DSPBF
Model NameInfineon Technologies IRS2609DSPBF
CategoryGate Drive ICs
BrandInfineon Technologies
DescriptionHalf Bridge 2 200mA 150ns 50ns 10V~20V 350mA SOIC-8 Gate Drive ICs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOIC-8
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Driven ConfigurationHalf Bridge
Operating Temperature-40℃~+150℃@(Tj)
Number of Drivers2
Load TypeIGBT;MOSFET
Peak Output Current(source)200mA
Rise Time150ns
Fall Time50ns
Supply Voltage10V~20V
Peak Output Current(sink)350mA

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