Infineon Technologies IRS2807DSPBF is a IRS2807DSPBF from Infineon Technologies, part of the Gate Drive ICs. It is designed for 2 200mA 150ns 50ns 10V~20V 350mA SOIC-8 Gate Drive ICs ROHS. This product comes in a SOIC-8 package and is sold as Tube-packed. Key features include:
- Driven Configuration: High Side;Low Side
- Operating Temperature: -40℃~+125℃@(Ta)
- Number of Drivers: 2
- Load Type: IGBT;MOSFET
- Peak Output Current(source): 200mA
- Rise Time: 150ns
- Fall Time: 50ns
- Supply Voltage: 10V~20V
- Peak Output Current(sink): 350mA
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IRS2807DSPBF
Full Specifications of IRS2807DSPBF
Model Number | IRS2807DSPBF |
Model Name | Infineon Technologies IRS2807DSPBF |
Category | Gate Drive ICs |
Brand | Infineon Technologies |
Description | 2 200mA 150ns 50ns 10V~20V 350mA SOIC-8 Gate Drive ICs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SOIC-8 |
Package / Arrange | Tube-packed |
Battery | No |
ECCN | EAR99 |
Driven Configuration | High Side;Low Side |
Operating Temperature | -40℃~+125℃@(Ta) |
Number of Drivers | 2 |
Load Type | IGBT;MOSFET |
Peak Output Current(source) | 200mA |
Rise Time | 150ns |
Fall Time | 50ns |
Supply Voltage | 10V~20V |
Peak Output Current(sink) | 350mA |
Compare Infineon Technologies - IRS2807DSPBF With Other 200 Models
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Related Models - IRS2807DSPBF Alternative
- Infineon Technologies 2EDN7534BXTSA1
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