ISC019N03L5SATMA1 by Infineon Technologies – Specifications

Infineon Technologies ISC019N03L5SATMA1 is a ISC019N03L5SATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 1.9mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 28A;100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.9mΩ@30A,10V
  • Power Dissipation (Pd): 2.5W;69W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.8nF@15V
  • Total Gate Charge (Qg@Vgs): 44nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on ISC019N03L5SATMA1

Full Specifications of ISC019N03L5SATMA1

Model NumberISC019N03L5SATMA1
Model NameInfineon Technologies ISC019N03L5SATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 1.9mΩ@30A,10V 2V@250uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)28A;100A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.9mΩ@30A,10V
Power Dissipation (Pd)2.5W;69W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.8nF@15V
Total Gate Charge (Qg@Vgs)44nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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