ISC019N04NM5ATMA1 by Infineon Technologies – Specifications

Infineon Technologies ISC019N04NM5ATMA1 is a ISC019N04NM5ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 1.9mΩ@50A,10V 3.4V@50uA 1PCSNChannel TDSON-8FL MOSFETs ROHS. This product comes in a TDSON-8FL package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 29A;170A
  • Power Dissipation (Pd): 3W;100W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.9mΩ@50A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.4V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.9nF@20V
  • Total Gate Charge (Qg@Vgs): 55nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

More on ISC019N04NM5ATMA1

Full Specifications of ISC019N04NM5ATMA1

Model NumberISC019N04NM5ATMA1
Model NameInfineon Technologies ISC019N04NM5ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 1.9mΩ@50A,10V 3.4V@50uA 1PCSNChannel TDSON-8FL MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTDSON-8FL
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)29A;170A
Power Dissipation (Pd)3W;100W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.9mΩ@50A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.4V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.9nF@20V
Total Gate Charge (Qg@Vgs)55nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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