ISC0602NLSATMA1 by Infineon Technologies – Specifications

Infineon Technologies ISC0602NLSATMA1 is a ISC0602NLSATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 7.3mΩ@20A,10V 2.3V@29uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 14A;66A
  • Power Dissipation (Pd): 2.5W;60W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3mΩ@20A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.3V@29uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.8nF@40V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

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Full Specifications of ISC0602NLSATMA1

Model NumberISC0602NLSATMA1
Model NameInfineon Technologies ISC0602NLSATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description80V 7.3mΩ@20A,10V 2.3V@29uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)14A;66A
Power Dissipation (Pd)2.5W;60W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.3mΩ@20A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.3V@29uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.8nF@40V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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