ISC230N10NM6ATMA1 by Infineon Technologies – Specifications

Infineon Technologies ISC230N10NM6ATMA1 is a ISC230N10NM6ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 23mΩ@10A,10V 3.3V@13uA 1PCSNChannel TDSON-8FL MOSFETs ROHS. This product comes in a TDSON-8FL package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 7.7A;31A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@10A,10V
  • Power Dissipation (Pd): 3W;48W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.3V@13uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 690pF@50V
  • Total Gate Charge (Qg@Vgs): 9.3nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

More on ISC230N10NM6ATMA1

Full Specifications of ISC230N10NM6ATMA1

Model NumberISC230N10NM6ATMA1
Model NameInfineon Technologies ISC230N10NM6ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 23mΩ@10A,10V 3.3V@13uA 1PCSNChannel TDSON-8FL MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseTDSON-8FL
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)7.7A;31A
Drain Source On Resistance (RDS(on)@Vgs,Id)23mΩ@10A,10V
Power Dissipation (Pd)3W;48W
Gate Threshold Voltage (Vgs(th)@Id)3.3V@13uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)690pF@50V
Total Gate Charge (Qg@Vgs)9.3nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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