Infineon Technologies ISP16DP10LMXTSA1 is a ISP16DP10LMXTSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 160mΩ@10V,2.2A [email protected] 1PCSPChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 2.1A;3.9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@10V,2.2A
- Power Dissipation (Pd): 1.8W;5W
- Gate Threshold Voltage (Vgs(th)@Id): [email protected]
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 2.1nF@50V
- Total Gate Charge (Qg@Vgs): 42nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.195 grams.
More on ISP16DP10LMXTSA1
Full Specifications of ISP16DP10LMXTSA1
Model Number | ISP16DP10LMXTSA1 |
Model Name | Infineon Technologies ISP16DP10LMXTSA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 100V 160mΩ@10V,2.2A [email protected] 1PCSPChannel SOT-223-4 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 0.195 grams / 0.006878 oz |
Package / Case | SOT-223-4 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 100V |
Continuous Drain Current (Id) | 2.1A;3.9A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 160mΩ@10V,2.2A |
Power Dissipation (Pd) | 1.8W;5W |
Gate Threshold Voltage (Vgs(th)@Id) | [email protected] |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 2.1nF@50V |
Total Gate Charge (Qg@Vgs) | 42nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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