ISP16DP10LMXTSA1 by Infineon Technologies – Specifications

Infineon Technologies ISP16DP10LMXTSA1 is a ISP16DP10LMXTSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 160mΩ@10V,2.2A [email protected] 1PCSPChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 2.1A;3.9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@10V,2.2A
  • Power Dissipation (Pd): 1.8W;5W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 2.1nF@50V
  • Total Gate Charge (Qg@Vgs): 42nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.195 grams.

Full Specifications of ISP16DP10LMXTSA1

Model NumberISP16DP10LMXTSA1
Model NameInfineon Technologies ISP16DP10LMXTSA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 160mΩ@10V,2.2A [email protected] 1PCSPChannel SOT-223-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.195 grams / 0.006878 oz
Package / CaseSOT-223-4
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)2.1A;3.9A
Drain Source On Resistance (RDS(on)@Vgs,Id)160mΩ@10V,2.2A
Power Dissipation (Pd)1.8W;5W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSPChannel
Input Capacitance (Ciss@Vds)2.1nF@50V
Total Gate Charge (Qg@Vgs)42nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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