Infineon Technologies ISP25DP06NMXTSA1 is a ISP25DP06NMXTSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 1.9A 250mΩ@1.9A,10V 4V@270uA 1PCSPChannel SOT-223-4 MOSFETs ROHS. This product comes in a SOT-223-4 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 1.9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@1.9A,10V
- Power Dissipation (Pd): 1.8W;4.2W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
- Type: 1PCSPChannel
- Input Capacitance (Ciss@Vds): 420pF@30V
- Total Gate Charge (Qg@Vgs): 10.8nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on ISP25DP06NMXTSA1
Full Specifications of ISP25DP06NMXTSA1
Model Number | ISP25DP06NMXTSA1 |
Model Name | Infineon Technologies ISP25DP06NMXTSA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 1.9A 250mΩ@1.9A,10V 4V@270uA 1PCSPChannel SOT-223-4 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | SOT-223-4 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 1.9A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 250mΩ@1.9A,10V |
Power Dissipation (Pd) | 1.8W;4.2W |
Gate Threshold Voltage (Vgs(th)@Id) | 4V@270uA |
Type | 1PCSPChannel |
Input Capacitance (Ciss@Vds) | 420pF@30V |
Total Gate Charge (Qg@Vgs) | 10.8nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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