ISS55EP06LM by Infineon Technologies – Specifications

Infineon Technologies ISS55EP06LM is a ISS55EP06LM from Infineon Technologies, part of the MOSFETs. It is designed for 60V 180mA 400mW 5.5Ω@10V,180mA 2V@11uA 1PCSPChannel SOT-23 MOSFETs ROHS. This product comes in a SOT-23 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 180mA
  • Power Dissipation (Pd): 400mW
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.5Ω@10V,180mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@11uA
  • Type: 1PCSPChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.25 grams.

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Full Specifications of ISS55EP06LM

Model NumberISS55EP06LM
Model NameInfineon Technologies ISS55EP06LM
CategoryMOSFETs
BrandInfineon Technologies
Description60V 180mA 400mW 5.5Ω@10V,180mA 2V@11uA 1PCSPChannel SOT-23 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.250 grams / 0.008819 oz
Package / CaseSOT-23
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)180mA
Power Dissipation (Pd)400mW
Drain Source On Resistance (RDS(on)@Vgs,Id)5.5Ω@10V,180mA
Gate Threshold Voltage (Vgs(th)@Id)2V@11uA
Type1PCSPChannel

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