ITD50N04S4L07ATMA1 by Infineon Technologies – Specifications

Infineon Technologies ITD50N04S4L07ATMA1 is a ITD50N04S4L07ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 50A 46W 7.2mΩ@50A,10V 2.2V@18uA 2 N-Channel TO-252-5 MOSFETs ROHS. This product comes in a TO-252-5 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 46W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2mΩ@50A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@18uA
  • Type: 2 N-Channel
  • Input Capacitance (Ciss@Vds): 2.48nF@25V
  • Total Gate Charge (Qg@Vgs): 33nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of ITD50N04S4L07ATMA1

Model NumberITD50N04S4L07ATMA1
Model NameInfineon Technologies ITD50N04S4L07ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 50A 46W 7.2mΩ@50A,10V 2.2V@18uA 2 N-Channel TO-252-5 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-5
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)46W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.2mΩ@50A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@18uA
Type2 N-Channel
Input Capacitance (Ciss@Vds)2.48nF@25V
Total Gate Charge (Qg@Vgs)33nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - ITD50N04S4L07ATMA1 With Other 200 Models

Related Models - ITD50N04S4L07ATMA1 Alternative

Scroll to Top