SGB20N60E3045A by Infineon Technologies – Specifications

Infineon Technologies SGB20N60E3045A is a SGB20N60E3045A from Infineon Technologies, part of the IGBTs. It is designed for 179W 40A 600V NPT(非穿通型) TO-263-3 IGBTs ROHS. This product comes in a TO-263-3 package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 225ns
  • Power Dissipation (Pd): 179W
  • Turn?on Delay Time (Td(on)): 36ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 40A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.4V@15V,20A
  • Total Gate Charge (Qg@Ic,Vge): 100nC
  • Turn?off Switching Loss (Eoff): 0.33mJ
  • Turn?on Switching Loss (Eon): 0.44mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SGB20N60E3045A

Full Specifications of SGB20N60E3045A

Model NumberSGB20N60E3045A
Model NameInfineon Technologies SGB20N60E3045A
CategoryIGBTs
BrandInfineon Technologies
Description179W 40A 600V NPT(非穿通型) TO-263-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))225ns
Power Dissipation (Pd)179W
Turn?on Delay Time (Td(on))36ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)40A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,20A
Total Gate Charge (Qg@Ic,Vge)100nC
Turn?off Switching Loss (Eoff)0.33mJ
Turn?on Switching Loss (Eon)0.44mJ

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