SGW50N60HS by Infineon Technologies – Specifications

Infineon Technologies SGW50N60HS is a SGW50N60HS from Infineon Technologies, part of the IGBTs. It is designed for 416W 100A 600V NPT(非穿通型) TO-247-3-1 IGBTs ROHS. This product comes in a TO-247-3-1 package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 310ns
  • Power Dissipation (Pd): 416W
  • Turn?on Delay Time (Td(on)): 47ns
  • Collector Current (Ic): 100A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 3.15V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 179nC
  • Turn?off Switching Loss (Eoff): 1.96mJ
  • Turn?on Switching Loss (Eon): 1.96mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SGW50N60HS

Full Specifications of SGW50N60HS

Model NumberSGW50N60HS
Model NameInfineon Technologies SGW50N60HS
CategoryIGBTs
BrandInfineon Technologies
Description416W 100A 600V NPT(非穿通型) TO-247-3-1 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-3-1
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))310ns
Power Dissipation (Pd)416W
Turn?on Delay Time (Td(on))47ns
Operating Temperature-
Collector Current (Ic)100A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.15V@15V,50A
Total Gate Charge (Qg@Ic,Vge)179nC
Turn?off Switching Loss (Eoff)1.96mJ
Turn?on Switching Loss (Eon)1.96mJ

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