SKB15N60 by Infineon Technologies – Specifications

Infineon Technologies SKB15N60 is a SKB15N60 from Infineon Technologies, part of the IGBTs. It is designed for 139W 31A 600V NPT(非穿通型) TO-263 IGBTs ROHS. This product comes in a TO-263 package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 234ns
  • Power Dissipation (Pd): 139W
  • Turn?on Delay Time (Td(on)): 32ns
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 31A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.4V@15V,15A
  • Total Gate Charge (Qg@Ic,Vge): 76nC
  • Diode Reverse Recovery Time (Trr): 279ns
  • Turn?on Switching Loss (Eon): 0.57mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on SKB15N60

Full Specifications of SKB15N60

Model NumberSKB15N60
Model NameInfineon Technologies SKB15N60
CategoryIGBTs
BrandInfineon Technologies
Description139W 31A 600V NPT(非穿通型) TO-263 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))234ns
Power Dissipation (Pd)139W
Turn?on Delay Time (Td(on))32ns
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)31A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.4V@15V,15A
Total Gate Charge (Qg@Ic,Vge)76nC
Diode Reverse Recovery Time (Trr)279ns
Turn?on Switching Loss (Eon)0.57mJ

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