SKB15N60E8151 by Infineon Technologies – Specifications

Infineon Technologies SKB15N60E8151 is a SKB15N60E8151 from Infineon Technologies, part of the IGBTs. It is designed for 139W 31A 600V NPT(非穿通型) TO-263 IGBTs ROHS. This product comes in a TO-263 package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 139W
  • Operating Temperature: -55℃~+150℃@(Tj)
  • Collector Current (Ic): 31A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: NPT(非穿通型)
  • Diode Reverse Recovery Time (Trr): 279ns
  • Turn?on Switching Loss (Eon): 0.57mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SKB15N60E8151

Model NumberSKB15N60E8151
Model NameInfineon Technologies SKB15N60E8151
CategoryIGBTs
BrandInfineon Technologies
Description139W 31A 600V NPT(非穿通型) TO-263 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)139W
Operating Temperature-55℃~+150℃@(Tj)
Collector Current (Ic)31A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Diode Reverse Recovery Time (Trr)279ns
Turn?on Switching Loss (Eon)0.57mJ

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