SN7002N H6433 by Infineon Technologies – Specifications

Infineon Technologies SN7002N H6433 is a SN7002N H6433 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 200mA 2.5Ω@10V,500mA 360mW 1.4V@26uA 1PCSNChannel SOT-323-3 MOSFETs ROHS. This product comes in a SOT-323-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 200mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,500mA
  • Power Dissipation (Pd): 360mW
  • Gate Threshold Voltage (Vgs(th)@Id): 1.4V@26uA
  • Reverse Transfer Capacitance (Crss@Vds): 2.8pF@25V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 34pF@25V
  • Total Gate Charge (Qg@Vgs): 1nC@0~10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.04 grams.

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Full Specifications of SN7002N H6433

Model NumberSN7002N H6433
Model NameInfineon Technologies SN7002N H6433
CategoryMOSFETs
BrandInfineon Technologies
Description60V 200mA 2.5Ω@10V,500mA 360mW 1.4V@26uA 1PCSNChannel SOT-323-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.040 grams / 0.001411 oz
Package / CaseSOT-323-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)200mA
Drain Source On Resistance (RDS(on)@Vgs,Id)2.5Ω@10V,500mA
Power Dissipation (Pd)360mW
Gate Threshold Voltage (Vgs(th)@Id)1.4V@26uA
Reverse Transfer Capacitance (Crss@Vds)2.8pF@25V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)34pF@25V
Total Gate Charge (Qg@Vgs)1nC@0~10V
Operating Temperature-55℃~+150℃@(Tj)

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