SPB80N03S2L05 by Infineon Technologies – Specifications

Infineon Technologies SPB80N03S2L05 is a SPB80N03S2L05 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 167W 4.9mΩ@55A,10V 2V@110uA 1PCSNChannel TO-263-2 MOSFETs ROHS. This product comes in a TO-263-2 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 80A
• Power Dissipation (Pd): 167W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 4.9mΩ@55A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2V@110uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 3.32nF@25V
• Total Gate Charge (Qg@Vgs): 89.7nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.