SPD02N80C3ATMA1 by Infineon Technologies – Specifications

Infineon Technologies SPD02N80C3ATMA1 is a SPD02N80C3ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 2A 2.7Ω@1.2A,10V 42W 3.9V@120uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 2A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7Ω@1.2A,10V
  • Power Dissipation (Pd): 42W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@120uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 290pF@100V
  • Total Gate Charge (Qg@Vgs): 16nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of SPD02N80C3ATMA1

Model NumberSPD02N80C3ATMA1
Model NameInfineon Technologies SPD02N80C3ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description800V 2A 2.7Ω@1.2A,10V 42W 3.9V@120uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)2A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.7Ω@1.2A,10V
Power Dissipation (Pd)42W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@120uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)290pF@100V
Total Gate Charge (Qg@Vgs)16nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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