Infineon Technologies SPD03N60S5 is a SPD03N60S5 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 3.2A 1.4Ω@2A,10V 38W 5.5V@135uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 3.2A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4Ω@2A,10V
- Power Dissipation (Pd): 38W
- Gate Threshold Voltage (Vgs(th)@Id): 5.5V@135uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 420pF@25V
- Total Gate Charge (Qg@Vgs): 16nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on SPD03N60S5
Full Specifications of SPD03N60S5
Model Number | SPD03N60S5 |
Model Name | Infineon Technologies SPD03N60S5 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 600V 3.2A 1.4Ω@2A,10V 38W 5.5V@135uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-252-3 |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 600V |
Continuous Drain Current (Id) | 3.2A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.4Ω@2A,10V |
Power Dissipation (Pd) | 38W |
Gate Threshold Voltage (Vgs(th)@Id) | 5.5V@135uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 420pF@25V |
Total Gate Charge (Qg@Vgs) | 16nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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