SPD04N50C3ATMA1 by Infineon Technologies – Specifications

Infineon Technologies SPD04N50C3ATMA1 is a SPD04N50C3ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 4.5A 950mΩ@2.8A,10V 50W 3.9V@200uA 1PCSNChannel TO-252-3-1 MOSFETs ROHS. This product comes in a TO-252-3-1 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@2.8A,10V
  • Power Dissipation (Pd): 50W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@200uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 470pF@25V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of SPD04N50C3ATMA1

Model NumberSPD04N50C3ATMA1
Model NameInfineon Technologies SPD04N50C3ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description500V 4.5A 950mΩ@2.8A,10V 50W 3.9V@200uA 1PCSNChannel TO-252-3-1 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3-1
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)950mΩ@2.8A,10V
Power Dissipation (Pd)50W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@200uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)470pF@25V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-55℃~+150℃@(Tj)

Compare Infineon Technologies - SPD04N50C3ATMA1 With Other 200 Models

Related Models - SPD04N50C3ATMA1 Alternative

Scroll to Top