SPD04N60C3ATMA1 by Infineon Technologies – Specifications

Infineon Technologies SPD04N60C3ATMA1 is a SPD04N60C3ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 4.5A 950mΩ@2.8A,10V 50W 3.9V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 4.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 950mΩ@2.8A,10V
  • Power Dissipation (Pd): 50W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.9V@200uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 490pF@25V
  • Total Gate Charge (Qg@Vgs): 25nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

Full Specifications of SPD04N60C3ATMA1

Model NumberSPD04N60C3ATMA1
Model NameInfineon Technologies SPD04N60C3ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 4.5A 950mΩ@2.8A,10V 50W 3.9V@200uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)4.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)950mΩ@2.8A,10V
Power Dissipation (Pd)50W
Gate Threshold Voltage (Vgs(th)@Id)3.9V@200uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)490pF@25V
Total Gate Charge (Qg@Vgs)25nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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