SPD04N80C3ATMA1 by Infineon Technologies – Specifications

Infineon Technologies SPD04N80C3ATMA1 is a SPD04N80C3ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4A 63W 1.3Ω@2.5A,10V 3.9V@240uA 1PCSNChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 800V
• Continuous Drain Current (Id): 4A
• Power Dissipation (Pd): 63W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.3Ω@2.5A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.9V@240uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 570pF@100V
• Total Gate Charge (Qg@Vgs): 31nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.38 grams.