SPD04P10PLGBTMA1 by Infineon Technologies – Specifications

Infineon Technologies SPD04P10PLGBTMA1 is a SPD04P10PLGBTMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 4.2A 38W 850mΩ@3A,10V 2V@380uA 1PCSPChannel TO-252-3 MOSFETs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 4.2A
  • Power Dissipation (Pd): 38W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 850mΩ@3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@380uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 372pF@25V
  • Total Gate Charge (Qg@Vgs): 16nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.6 grams.

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Full Specifications of SPD04P10PLGBTMA1

Model NumberSPD04P10PLGBTMA1
Model NameInfineon Technologies SPD04P10PLGBTMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 4.2A 38W 850mΩ@3A,10V 2V@380uA 1PCSPChannel TO-252-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.600 grams / 0.021164 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)4.2A
Power Dissipation (Pd)38W
Drain Source On Resistance (RDS(on)@Vgs,Id)850mΩ@3A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@380uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)372pF@25V
Total Gate Charge (Qg@Vgs)16nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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